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| TS13003HV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 530V 900V 1.5A 0.5V @ IC / IB = 0.5A / 0.1A Features High Voltage High Speed Switching Block Diagram Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. TS13003HVCT B0 TS13003HVCT B0G TS13003HVCT A3 TS13003HVCT A3G Package TO-92 TO-92 TO-92 TO-92 Packing 1Kpcs / Bulk 1Kpcs / Bulk 2Kpcs / Ammo 2Kpcs / Ammo Note: "G" denote for Green Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range DC Pulse Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit 900V 530V 10 1.5 3 1.5 +150 - 55 to +150 Unit V V V A W o o C C Thermal Performance Parameter Junction to Ambient Thermal Resistance Symbol RJA Limit 119.4 Unit o C/W 1/5 Version: A07 TS13003HV High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage IC = 1mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VCB = 800V, IE = 0 VEB = 10V, IC = 0 IC / IB = 0.5A / 0.1A IC / IB = 1.0A / 0.25A IC / IB = 1.5A / 0.5A Base-Emitter Saturation Voltage IC / IB = 0.5A / 0.1A IC / IB = 1.0A / 0.25A VCE = 10V, IC = 10mA DC Current Gain Dynamic Characteristics Frequency Output Capacitance Delay Time Rise Time Storage Time Fall Time VCE = 10V, IC = 0.1A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 1A, IB1 = IB2 = 0.2A, tp = 25uS Duty Cycle 1% fT Cob td tr tSTG tf 4 ------21 0.05 1.1 2 0.4 --0.2 -4 0.7 MHz pF uS uS uS uS VCE = 10V, IC = 400mA VCE = 10V, IC = 1A hFE BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VBE(SAT)1 VBE(SAT)2 900 530 9 -------15 20 6 -----0.3 0.5 0.9 --------10 0.5 0.5 1 2 1 1.2 40 40 40 V V V V V uA uA Conditions Symbol Min Typ Max Unit Resistive Load Switching Time (Ratings) Note: pulse test: pulse width 300uS, duty cycle 2% 2/5 Version: A07 TS13003HV High Voltage NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. VBE(SAT Figure 4. Power Derating Figure 5. Reverse Bias SOA Figure 6. Safety Operating Area 3/5 Version: A07 TS13003HV High Voltage NPN Transistor TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30(typ) 0.563(typ) 0.43 0.49 0.017 0.019 2.19 2.81 0.086 0.111 3.30 3.70 0.130 0.146 2.42 2.66 0.095 0.105 0.37 0.43 0.015 0.017 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 4/5 Version: A07 TS13003HV High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: A07 |
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